Mechanical properties characterization of c-plane (0001) and m-plane (10-10) GaN by nanoindentation examination

被引：23

作者：

Fujikane, Masaki ^{[1
]}

Inoue, Akira ^{[1
]}

Yokogawa, Toshiya ^{[1
]}

Nagao, Shijo ^{[2
]}

Nowak, Roman ^{[2
]}

机构：

[1] Panasonic Corp, Adv Devices Dev Ctr, 3-1-1 Yagumo Naka Machi, Moriguchi, Osaka 5708501, Japan

[2] Aalto Univ, Nordic Hysitron Lab, FL-02015 Espoo, Finland

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

GaN; VPE; dislocations; elastic moduli; Young's modulus; nanoscale deformation; SURFACE DEFORMATION; SAPPHIRE; INDENTATION; CRYSTAL; PLASTICITY;

D O I：

10.1002/pssc.200983641

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The mechanical properties of m-plane (10-10) GaN single crystal was measured by nanoindentation examination for the first time. Young's modulus, Berkovich hardness and conical hardness were 284.2 GPa, 15.0 GPa and 15.7 GPa for m-plane GaN respectively. In contrast, those values in c-plane (0001) GaN were higher such as 323.8 GPa, 20.0 GPa and 21.2 GPa, respectively. Cathodoluminescence observed dislocation density distribution on m-plane GaN surface which was gradually decreased following the direction from -c axis edge to +c axis edge. By analyzing the correlation between dislocation density distribution and yield shear stress, we derived a relational equation that reprised the inverse Hall-Petch relation. This study suggested the possibility for evaluating the reliability for GaN based light emitting device by nanoindentation technique. [GRAPHICS] The typical P-h data obtained by nanoindentation in the m-plane GaN crystal performed with the conical indenter. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：3

共 21 条

[1] Nondislocation origin of GaAs nanoindentation pop-in event [J].

Chrobak, D. ;

Nordlund, K. ;

Nowak, R. .

PHYSICAL REVIEW LETTERS, 2007, 98 (04)

[2] Elastic-plastic transition during nanoindentation in bulk GaN crystal [J].

Fujikane, Masaki ;

Leszczyski, Michal ;

Nagao, Shijo ;

Nakayama, Tadachika ;

Yamanaka, Shinsuke ;

Niihara, Koichi ;

Nowak, Roman .

JOURNAL OF ALLOYS AND COMPOUNDS, 2008, 450 (1-2) :405-411

[3] High-quality nonpolar m-plane GaN substrates grown by HVPE [J].

Fujito, Kenji ;

Kiyomi, Kazumasa ;

Mochizuki, Tae ;

Oota, Hirotaka ;

Namita, Hideo ;

Nagao, Satoru ;

Fujimura, Isao .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (05) :1056-1059

[4]

Hong M. H., 2000, MATER RES SOC S P, V622, P6

[5] Photopumped stimulated emission from homoepitaxial GaN grown on bulk GaN prepared by sublimation method [J].

Kurai, S ;

Naoi, Y ;

Abe, T ;

Ohmi, S ;

Sakai, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (1B) :L77-L79

[6] A new view of the onset of plasticity during the nanoindentation of aluminium [J].

Minor, Andrew M. ;

Asif, S. A. Syed ;

Shan, Zhiwei ;

Stach, Eric A. ;

Cyrankowski, Edward ;

Wyrobek, Thomas J. ;

Warren, Oden L. .

NATURE MATERIALS, 2006, 5 (09) :697-702

[7] Anisotropic elasticity of IVB transition-metal mononitrides determined by ab initio calculations [J].

Nagao, S ;

Nordlund, K ;

Nowak, R .

PHYSICAL REVIEW B, 2006, 73 (14)

[8] Achieving consistency of Young's modulus determination from nanoscale deformation of low-k films [J].

Nagao, S. ;

Fujikane, M. ;

Tymiak, N. ;

Nowak, R. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (10)

[9] Reduction of internal stress in sputter-deposited films by energetic ion bombardment [J].

Nowak, R ;

Horino, Y ;

Ando, Y ;

Maruno, S .

APPLIED PHYSICS LETTERS, 1996, 68 (26) :3743-3745

[10] Elastic and plastic properties of GaN determined by nano-indentation of bulk crystal [J].

Nowak, R ;

Pessa, M ;

Suganuma, M ;

Leszczynski, M ;

Grzegory, I ;

Porowski, S ;

Yoshida, F .

APPLIED PHYSICS LETTERS, 1999, 75 (14) :2070-2072

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