Improved T-Shaped Gate Double Heterojunction AlGaN/GaN/InGaN/GaN HEMT-Based Wideband Flat LNA

被引：6
作者：
Toufani, Sorour [1 ]
Dousti, Massoud [1 ]
机构：
[1] Islamic Azad Univ, Sci & Res Branch, Dept Elect Engn, Tehran, Iran
来源：
IETE JOURNAL OF RESEARCH | 2016年 / 62卷 / 04期
关键词：
Double heterojunction HEMT; T-shaped gate; flat gain LNA; cascode topology amplifier; ALGAN/GAN HEMTS; LAYER; TRANSISTORS; BARRIER;
D O I：
10.1080/03772063.2015.1085336
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we report and design a new kind of AlGaN/GaN/InGaN/GaN high electron mobility transistor (HEMT), consisting of T-shaped gate with low resistance contacts, and the performance of a cascode topology low noise amplifier (LNA) with shunt-feedback technique for wideband and flat gain, based on mentioned HEMT. The proposed LNA has approximate to 17.5dB of gain from 3 to 10GHz with a noise figure of 0.7-1.1dB in the band of interest. The direct current (DC) and radio frequency advantages of the reported HEMT and the superior flat gain performance of the cascode LNA are demonstrated.
引用
收藏
页码：488 / 492
页数：5
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