Molecular beam epitaxy growth of antimony-based mid-infrared interband cascade photodetectors

被引：8

作者：

Tian, Zhao-Bing ^{[1
]}

Schuler-Sandy, Ted ^{[1
]}

Krishna, Sanjay ^{[1
]}

Tang, Dinghao ^{[2
]}

Smith, David J. ^{[2
]}

机构：

[1] Univ New Mexico, Ctr High Tech Mat, Albuquerque, NM 87106 USA

[2] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2015年 / 425卷

关键词：

Molecular beam epitaxy; Type II superlattices; AISID/InAs/GaSb quantum wells; Infrared photodetectors; SUPERLATTICES;

D O I：

10.1016/j.jcrysgro.2015.02.062

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The molecular beam epitaxial growth and optimization of antimony based interband cascade photo detectors, on both GaSb and GaAs substrates, are presented. Material characterization techniques, including X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy, are used to evaluate the epitaxial material quality. This work has led to the demonstration of mid-infrared photodetectors operational up to a record-high 450 K, and a dark current density as low as 1.10 x 10(-7) A/cm(2) at 150 K. The results also suggest that further improved material quality and device performance can be expected via optimization of growth parameters. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：364 / 368

页数：5

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