Enhanced dielectric and energy -storage properties in ZnO-doped 0.9(0.94Na0.5Bi0.5TiO3-0.06BaTiO3)-0.1NaNbO3 ceramics

被引:85
作者
Yao, Yuan [1 ]
Li, Yong [1 ]
Sun, Ningning [1 ]
Du, Jinhua [1 ]
Li, Xiaowei [1 ]
Zhang, Liwen [1 ]
Zhang, Qiwei [1 ]
Hao, Xihong [1 ]
机构
[1] Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Inner Mongolia Key Lab Ferroelect Related New Ene, Baotou 014010, Peoples R China
关键词
Na0.5Bi0.5TiO3; Dielectric property; Energy-storage performance; Discharge property; ELECTRICAL-PROPERTIES; ANTIFERROELECTRIC CERAMICS; FERROELECTRIC PROPERTIES; THIN-FILM; LEAD; PERFORMANCE; CAPACITORS; DEPENDENCE; BEHAVIOR; DENSITY;
D O I
10.1016/j.ceramint.2017.12.174
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
[0.9(0.94Na(0.5)Bi(0.5)TiO(3)- 0.06BaTiO(3))- 0.1NaNbO(3)]-xZnO (NBT-BT-NN-xZnO, x = 0, 0.5 wt%, 1.0 wt%, 1.5 wt %, and 2.0 wt%) ferroelectric ceramics were fabricated using a conventional solid-state reaction method. The effects of ZnO content on dielectric, energy-storage and discharge properties were systematically investigated. Dielectric constant and difference between maximum and remanent polarization were significantly improved by ZnO doping. Dielectric constant of NBT-BT-NN-1.0-wt% ZnO was 3218 at 1 kHz and room temperature, i.e. one time bigger than that of pure NBT-BT-NN ceramic. As a consequence, a maximum energy-storage density of 1.27 J/cm(3) with a corresponding efficiency of 67% was obtained in NBT-BT-NN-1.0-wt% ZnO ceramic. Moreover, its pulsed discharge energy density was 1.17 J/cm(3), and 90% of which could be released in less than 300 ns. Therefore, ZnO doped NBT-BT-NN ceramic with a large energy-storage density and short release time could be a potential candidate for applications in high energy-storage capacitors.
引用
收藏
页码:5961 / 5966
页数:6
相关论文
共 44 条
[1]   Antiferroelectric Thin-Film Capacitors with High Energy-Storage Densities, Low Energy Losses, and Fast Discharge Times [J].
Ahn, Chang Won ;
Amarsanaa, Gantsooj ;
Won, Sung Sik ;
Chae, Song A. ;
Lee, Dae Su ;
Kim, Ill Won .
ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (48) :26381-26386
[2]   Sol-gel synthesis and characterization of BaTiO3-doped (Bi0.5Na0.5)TiO3 piezoelectric ceramics [J].
Cernea, Marin ;
Andronescu, Ecaterina ;
Radu, Roxana ;
FochiB, Fabio ;
Galassi, Carmen .
JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 490 (1-2) :690-694
[3]   Synthesis and characterizations of BNT-BT and BNT-BT-KNN ceramics for actuator and energy storage applications [J].
Chandrasekhar, M. ;
Kumar, P. .
CERAMICS INTERNATIONAL, 2015, 41 (04) :5574-5580
[4]   Concentration-dependent near-infrared quantum cutting in NaYF4:Pr3+, Yb3+ phosphor [J].
Chen, X. P. ;
Huang, X. Y. ;
Zhang, Q. Y. .
JOURNAL OF APPLIED PHYSICS, 2009, 106 (06)
[5]   Preparation and characterization of the bismuth sodium titanate (Na0.5Bi0.5TiO3) ceramic doped with ZnO [J].
Chou, Chuen-Shii ;
Wu, Chun-Yu ;
Yang, Ru-Yuan ;
Ho, Cheng-Yang .
ADVANCED POWDER TECHNOLOGY, 2012, 23 (03) :358-365
[6]   Electrical properties of Na1/2Bi1/2TiO3-BaTiO3 ceramics [J].
Chu, BJ ;
Chen, DR ;
Li, GR ;
Yin, QR .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2002, 22 (13) :2115-2121
[7]   Composition- and Temperature-Dependent Large Strain in (1-x) (0.8Bi0.5Na0.5TiO3-0.2Bi0.5K0.5TiO3)-xNaNbO3 Ceramics [J].
Dong, Guangzhi ;
Fan, Huiqing ;
Shi, Jing ;
Li, Mengmeng .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2015, 98 (04) :1150-1155
[8]   Thermal simulation for geometric optimization of metallized polypropylene film capacitors [J].
El-Husseini, MH ;
Venet, P ;
Rojat, G ;
Joubert, C .
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2002, 38 (03) :713-718
[9]   Dynamic hysteresis and scaling behavior in epitaxial antiferroelectric film [J].
Ge, Jun ;
Chen, Ying ;
Dong, Xianlin ;
Remiens, Denis ;
Guo, Xin ;
Cao, Fei ;
Wang, Genshui .
THIN SOLID FILMS, 2015, 584 :108-111
[10]   Composition-dependent dielectric and energy-storage properties of (Pb,La)(Zr,Sn,Ti)O3 antiferroelectric thick films [J].
Hao, Xihong ;
Wang, Ying ;
Zhang, Le ;
Zhang, Liwen ;
An, Shengli .
APPLIED PHYSICS LETTERS, 2013, 102 (16)