High Performance RF LDMOS Power Transistor for the New Generation Base Station

In this paper, we present an high performance RF LDMOS transistor based on modified CMOS technology. High power density and low parasitic output capacitance is achieved by the co-optimization among the length of the field plate, the oxide thickness, the drift region doping energy, and the doping and the thickness of epitaxy layer. Excellent characterizations are achieved for Multi-Carrier 3G Base Station applications with linear gain of 19dB at 2170MHz, high efficiency of 66% and 52.7dBm of 3dB power compression point. A load pull system is set up to test the optimum impedance points of the transistor, and the RF performance is evaluated by designing internal matching network and a TRL test fixture.