Polaron effects on the optical absorption coefficients and refractive index changes in a square quantum well

被引:23
作者
Li, Ning [1 ]
Guo, Kang-Xian [1 ]
Shao, Shuai [1 ]
机构
[1] Guangzhou Univ, Coll Phys & Elect Engn, Dept Phys, Guangzhou 510006, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
Quantum wells; Polaron effect; Optical properties; ELECTRON-PHONON INTERACTION; FIELD; RECTIFICATION; TRANSITIONS; ENERGY; DOT;
D O I
10.1016/j.spmi.2011.08.004
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The linear and nonlinear optical absorption coefficients and refractive index changes are obtained by using the compact density-matrix approach and an iterative procedure. With typical semiconducting GaAs materials, the linear, third-order nonlinear, total optical absorption coefficients and the optical refractive index have been examined. We find that the polaron effect has an important influence on the linear, third-order nonlinear, and total absorption coefficients as well as the refractive index changes. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码:461 / 469
页数:9
相关论文
共 26 条
[1]  
Chen CY, 1998, PHYSICA B, V245, P92, DOI 10.1016/S0921-4526(97)83087-6
[2]   OPTICAL-TRANSITIONS IN A PARABOLIC QUANTUM WELL WITH AN APPLIED ELECTRIC-FIELD - ANALYTICAL SOLUTIONS [J].
CHUANG, SL ;
AHN, D .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (07) :2822-2826
[3]   POLARON EFFECTS ON THE OPTICAL RECTIFICATION IN ELECTRIC-FIELD-BIASED PARABOLIC QUANTUM-WELLS [J].
GUO, KX ;
CHEN, CY .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1995, 7 (32) :6583-6589
[4]   NEW OPTICAL MEMORY STRUCTURE USING SELF-ASSEMBLED INAS QUANTUM DOTS [J].
IMAMURA, K ;
SUGIYAMA, Y ;
NAKATA, Y ;
MUTO, S ;
YOKOYAMA, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (11A) :L1445-L1447
[5]  
KAN Y, 1987, IEEE J QUANTUM ELECT, V23, P2167
[6]   FREE CARRIER INDUCED CHANGES IN THE ABSORPTION AND REFRACTIVE-INDEX FOR INTERSUBBAND OPTICAL-TRANSITIONS IN ALXGA1-XAS/GAAS/ALXGA1-XAS QUANTUM-WELLS [J].
KUHN, KJ ;
IYENGAR, GU ;
YEE, S .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (09) :5010-5017
[7]   SINGLE HOLE QUANTUM-DOT TRANSISTORS IN SILICON [J].
LEOBANDUNG, E ;
GUO, LJ ;
CHOU, SY .
APPLIED PHYSICS LETTERS, 1995, 67 (16) :2338-2340
[8]  
Li WS, 1997, PHYSICA B, V229, P375, DOI 10.1016/S0921-4526(96)00855-1
[9]   ELECTRON-PHONON INTERACTION IN A DIELECTRIC SLAB - EFFECT OF ELECTRONIC POLARIZABILITY [J].
LICARI, JJ ;
EVRARD, R .
PHYSICAL REVIEW B, 1977, 15 (04) :2254-2264
[10]  
Likharev, 1998, IBM J RES DEV, V32, P1444