Field emission from Carbon Nanotubes films deposited on etched Si

被引：0
|
作者：
Stepinska, I. [1 ]
Radomska, J. [1 ]
Wronka, H. [1 ]
Rzepka, E. [1 ]
Kozlowski, M. [1 ]
Czerwosz, E. [1 ]
机构：
[1] Tele & Radio Res Inst, PL-03450 Warsaw, Poland
来源：
PHOTONICS APPLICATIONS IN ASTRONOMY, COMMUNICATIONS, INDUSTRY, AND HIGH-ENERGY PHYSICS EXPERIMENTS 2014 | 2014年 / 9290卷
关键词：
field emission; carbon nanotubes; etched silicon; SEM; ELECTRON-EMISSION; CATHODES; HILLOCKS; SILICON;
D O I：
10.1117/12.2075181
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Field emission from carbon nanotubes films prepared on etched silicon is presented. The etched Si surface has hillockslike form. CNTs films were obtained in two-step method consisting of physical vapor deposition and chemical vapor deposition. For some samples CNTs growth mainly on the top of the hillocks. Field emission from these structures were observed and emission current (at 25 V/mu m) was 0.01-0.03mA. The current - voltage characteristics and an interpretation of observed emission were performed on base of Fowler-Nordheim theory. The short-term stability measurement of emission were also performed.
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页数：7
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