Wide-Range Frequency-Agile Microwave Generation up to 10 GHz Based on Vanadium-Compensated 4H-SiC Photoconductive Semiconductor Switch

被引：26
作者：
Chu, Xu [1 ]
Xun, Tao [1 ]
Wang, Langning [1 ]
Yang, Hanwu [1 ]
Liu, Jinliang [1 ]
He, Juntao [1 ]
Zhang, Jun [1 ]
机构：
[1] Natl Univ Def Technol, Coll Adv Interdisciplinary Studies, Changsha 410073, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 07期
基金：
中国国家自然科学基金;
关键词：
Masers; Microwave circuits; Power lasers; Microwave photonics; Microwave generation; Microstrip; Microwave amplifiers; 4H silicon carbide (4H-SiC); frequency-agile microwave generation; photoconductive semiconductor switch (PCSS); microwave photonics; PERFORMANCE;
D O I：
10.1109/LED.2022.3179292
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A frequency-agile microwave generating system is examined in this letter. Vanadium-compensated semi-insulation (VCSI) 4H-SiC photoconductive semi- conductor switch (PCSS) has been introduced to achieve wide-range frequency tuning. The output microwave frequency is tuned by adjusting the pulse width of the laser. Both the simulation and the experimental results show a tuning frequency range of 0.5 GHz to 10.0 GHz. The maximum operating output power of the system at 10 GHz is 1.13 W, equivalent to a charging voltage of 1.5 kV and a modulated light wavelength of 1064 nm. Further experiment revealed that with 355 nm laser and charging voltage of 5 kV, the output power could be increased to 86.5 kW.
引用
收藏
页码：1013 / 1016
页数：4
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