Formation of cellular structure in SiGe layers under nanosecond laser irradiation

被引：1
|
作者：
Gatskevich, E. I. [1 ]
Ivlev, G. D. [2 ]
Malevich, V. L. [3 ,4 ]
机构：
[1] Belarusian Natl Tech Univ, Minsk 220013, BELARUS
[2] Belarusian State Univ, Minsk 220080, BELARUS
[3] Natl Acad Sci Belarus, Inst Phys, Minsk 220072, BELARUS
[4] Univ Informat Technol Mech & Opt, St Petersburg 197101, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2015年 / 41卷 / 01期
关键词：
Technical Physic Letter; Nanosecond Laser; Crystallization Front; SiGe Layer; Nanosecond Laser Pulse;
D O I：
10.1134/S1063785015010046
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Heating, melting, and crystallization processes of SiGe solid solution on a silicon substrate occurring under the influence of nanosecond laser irradiation were numerically simulated. Formation of cellular structures during solidification of the binary melt due to a segregation element separation was analyzed. Calculation results were compared with known experimental data characterizing the duration of laser-induced phase transformations and average sizes of the cells (which are formed due to the effect of concentration supercooling) as a function of the power density in the laser pulse.
引用
收藏
页码：21 / 24
页数：4
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