Formation of cellular structure in SiGe layers under nanosecond laser irradiation

被引：1

作者：

Gatskevich, E. I. ^{[1
]}

Ivlev, G. D. ^{[2
]}

Malevich, V. L. ^{[3
,4
]}

机构：

[1] Belarusian Natl Tech Univ, Minsk 220013, BELARUS

[2] Belarusian State Univ, Minsk 220080, BELARUS

[3] Natl Acad Sci Belarus, Inst Phys, Minsk 220072, BELARUS

[4] Univ Informat Technol Mech & Opt, St Petersburg 197101, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2015年 / 41卷 / 01期

关键词：

Technical Physic Letter; Nanosecond Laser; Crystallization Front; SiGe Layer; Nanosecond Laser Pulse;

D O I：

10.1134/S1063785015010046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heating, melting, and crystallization processes of SiGe solid solution on a silicon substrate occurring under the influence of nanosecond laser irradiation were numerically simulated. Formation of cellular structures during solidification of the binary melt due to a segregation element separation was analyzed. Calculation results were compared with known experimental data characterizing the duration of laser-induced phase transformations and average sizes of the cells (which are formed due to the effect of concentration supercooling) as a function of the power density in the laser pulse.

引用

页码：21 / 24

页数：4

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