Effect of Post-Growth Treatments on the ZnGeP2 Single Crystal Optical Properties in THz Range

被引：1

作者：

Voevodin, V. I. ^{[1
]}

Gribenyukov, A. I. ^{[2
]}

Dorozhkin, K. V. ^{[1
]}

机构：

[1] Natl Res Tomsk State Univ, Tomsk, Russia

[2] Russian Acad Sci, Siberian Branch, Inst Monitoring Climat & Ecol Syst, Tomsk, Russia

来源：

关键词：

ZnGeP2; terahertz range; annealing; absorption coefficient; ordinary ray; extraordinary ray; PICOSECOND PARAMETRIC SUPERLUMINESCENCE;

D O I：

10.1007/s11182-020-01993-w

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

[No abstract available]

引用

页码：2375 / 2378

页数：4

共 8 条

[1] Chuchupal S. V., 2016, THESIS
[2] Gelhof W, 2003, CHEM SOLIDS, V64, P1923, DOI [10.1016/S0022-3697(03)00063-5, DOI 10.1016/S0022-3697(03)00063-5]
[3] PHOTOINDUCED ELECTRON-PARAMAGNETIC-RESONANCE OF THE PHOSPHORUS VACANCY IN ZNGEP2
GILES, NC
HALLIBURTON, LE
SCHUNEMANN, PG
POLLAK, TM
[J]. APPLIED PHYSICS LETTERS, 1995, 66 (14) : 1758 - 1760
[4] Broadband terahertz pulse emission from ZnGeP2
Rowley, J. D.
Pierce, J. K.
Brant, A. T.
Halliburton, L. E.
Giles, N. C.
Schunemann, P. G.
Bristow, A. D.
[J]. OPTICS LETTERS, 2012, 37 (05) : 788 - 790
[5] Two-temperature synthesis of ZnGeP2
Verozubova, G. A.
Gribenyukov, A. I.
Mironov, Yu. P.
[J]. INORGANIC MATERIALS, 2007, 43 (10) : 1040 - 1045
[6] VODOPYANOV KL, 1985, IZV AN SSSR FIZ+, V49, P569
[7] VODOPYANOV KL, 1987, KVANTOVAYA ELEKTRON+, V14, P1815
[8] Increasing the laser-induced damage threshold of single-crystal ZnGeP2
Zawilski, Kevin T.
Setzler, Scott D.
Schunemann, Peter G.
Pollak, Thomas M.
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2006, 23 (11) : 2310 - 2316