Boron concentration dependence of Raman spectra on {100} and {111} facets of B-doped CVD diamond

被引：195
|
作者：
Ushizawa, K [1 ]
Watanabe, K [1 ]
Ando, T [1 ]
Sakaguchi, I [1 ]
Nishitani-Gamo, M [1 ]
Sato, Y [1 ]
Kanda, H [1 ]
机构：
[1] Natl Inst Res Inorgan Mat, Japan Sci & Technol Corp, Core Res Evolut Sci & Technol, Tsukuba, Ibaraki 3050044, Japan
来源：
DIAMOND AND RELATED MATERIALS | 1998年 / 7卷 / 11-12期
关键词：
boron doping; diamond individual crystal; Raman microscopy; MPCVD;
D O I：
10.1016/S0925-9635(98)00296-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated Raman spectra of {100} and {111} facets of B-doped diamond crystals grown by microwave plasma assisted chemical vapor deposition as a function of boron concentration. We have used individual crystals rather than films to avoid stresses which can cause shifts and broadening of the Raman line. A small amount of diborane improves the crystal quality of deposited diamond with changing the Raman spectral features. The asymmetry and broadening of the one-phonon are due to Fano interference, and broad bands centered ca 500 and 1230 cm(-1) appear. (C) 1998 Elsevier Science S.A. All rights reserved.
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收藏
页码：1719 / 1722
页数：4
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