Effect of Additives on Making Texture Surface on Multicrystalline Silicon Wafer by Diamond Wire Sawing

被引:0
作者
Wu, Xiaowei [1 ,2 ,3 ]
Tan, Yi [1 ]
Liu, Rui [2 ,3 ]
Li, Jiayan [1 ]
Cai, Min [1 ]
Li, Pengting [1 ]
机构
[1] Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China
[2] State Key Lab Adv Power Transmiss Technol, Beijing 102209, Peoples R China
[3] Global Energy Interconnect Res Inst Co Ltd, Beijing 102209, Peoples R China
基金
中国国家自然科学基金;
关键词
Diamond wire sawing; Multicrystalline silicon; Texturization; Additives; Acid etching; SIC-SLURRY; TEXTURIZATION;
D O I
10.1007/s12633-021-01248-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In the production of multicrystalline silicon solar cell, diamond wire sawing method (DWS) is an important technique, which has already completely replaced multiwire slurry sawing (MWSS) method. And the making texture surface is one of the crucial steps for preparing silicon solar cells. Acid etching method with additives is an effective way to make texture surface on DWS multicrystalline silicon wafer surface. The texture structure was obtained in an acid solution by adding NaNO2, a mixture solution of PEG and PVA, DBSA and sodium citrate solution, and the volume ratio of HF, HNO3 and H2O for acid solution is 1:5:3. The reflectivity of silicon surface after etching can reduce to 20.06%, and the depth-to-width ratio of texture structure is 0.55. The photovoltaic conversion efficiency of solar cell obtained under this condition is the highest, the maximum value is 18.69%.
引用
收藏
页码:9489 / 9498
页数:10
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