Monte Carlo simulation of velocity modulation transistors

被引：0

作者：

Sampedro, C ^{[1
]}

Godoy, A ^{[1
]}

Gámiz, F ^{[1
]}

Roldan, J ^{[1
]}

Carceller, JE ^{[1
]}

Cartujo, P ^{[1
]}

机构：

[1] Univ Granada, Dept Elect & Tecnol Computadores, Granada 18071, Spain

来源：

2005 Spanish Conference on Electron Devices, Proceedings | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An Ensemble Monte Carlo simulator has been developed to study the possibility that a Double Gate Silicon on Insulator (DGSOI) transistor could operate as a Velocity Modulation Transistor (VMT). Stationary and transient behaviors have been analyzed. As the main goal of this work, we have focused on the time necessary to transfer the charge from one channel to the other since this time will determine the frequency range of operation of the device.

引用

页码：377 / 380

页数：4

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