Charge puddles in a completely compensated topological insulator

被引：12

作者：

Rischau, C. W. ^{[1
]}

Ubaldini, A. ^{[2
]}

Giannini, E. ^{[2
]}

van der Beek, C. J. ^{[1
]}

机构：

[1] Univ Paris Saclay, Lab Solides Irradies, Ecole Polytech, CNRS,CEA, F-91128 Palaiseau, France

[2] Univ Geneva, CH-1211 Geneva 4, Switzerland

来源：

NEW JOURNAL OF PHYSICS | 2016年 / 18卷

基金：

美国国家卫生研究院;

关键词：

topological insulator; irradiation; compensation; charge puddles; bismuth telluride; QUANTUM OSCILLATIONS; CONDUCTION; SURFACE; BI2TE3; MAGNETORESISTANCE; RESISTIVITY; TRANSITION; BI2SE3; BAND;

D O I：

10.1088/1367-2630/18/7/073024

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Compensation of intrinsic charges is widely used to reduce the bulk conductivity of 3D topological insulators (TIs). Here we use low temperature electron irradiation-induced defects paired with in situ electrical transport measurements to fine-tune the degree of compensation in Bi2Te3. The coexistence of electrons and holes at the point of optimal compensation can only be explained by bulk carriers forming charge puddles. These need to be considered to understand the electric transport in compensated TI samples, irrespective of the method of compensation.

引用

页数：6

共 41 条

[1] Bi2Te3-xSex series studied by resistivity and thermopower [J].

Akrap, Ana ;

Ubaldini, Alberto ;

Giannini, Enrico ;

Forro, Laszlo .

EPL, 2014, 107 (05)

[2]

Beidenkopf H, 2011, NAT PHYS, V7, P939, DOI [10.1038/NPHYS2108, 10.1038/nphys2108]

[3] Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3 [J].

Bianchi, Marco ;

Guan, Dandan ;

Bao, Shining ;

Mi, Jianli ;

Iversen, Bo Brummerstedt ;

King, Philip D. C. ;

Hofmann, Philip .

NATURE COMMUNICATIONS, 2010, 1

[4] Self-organized charge puddles in a three-dimensional topological material [J].

Borgwardt, N. ;

Lux, J. ;

Vergara, I. ;

Wang, Zhiwei ;

Taskin, A. A. ;

Segawa, Kouji ;

van Loosdrecht, P. H. M. ;

Ando, Yoichi ;

Rosch, A. ;

Grueninger, M. .

PHYSICAL REVIEW B, 2016, 93 (24)

[5] Transport properties of topological insulators: Band bending, bulk metal-to-insulator transition, and weak anti-localization [J].

Brahlek, Matthew ;

Koirala, Nikesh ;

Bansal, Namrata ;

Oh, Seongshik .

SOLID STATE COMMUNICATIONS, 2015, 215 :54-62

[6] Strong surface scattering in ultrahigh-mobility Bi2Se3 topological insulator crystals [J].

Butch, N. P. ;

Kirshenbaum, K. ;

Syers, P. ;

Sushkov, A. B. ;

Jenkins, G. S. ;

Drew, H. D. ;

Paglione, J. .

PHYSICAL REVIEW B, 2010, 81 (24)

[7] Tunable surface conductivity in Bi2Se3 revealed in diffusive electron transport [J].

Chen, J. ;

He, X. Y. ;

Wu, K. H. ;

Ji, Z. Q. ;

Lu, L. ;

Shi, J. R. ;

Smet, J. H. ;

Li, Y. Q. .

PHYSICAL REVIEW B, 2011, 83 (24)

[8] Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3 [J].

Chen, Y. L. ;

Analytis, J. G. ;

Chu, J. -H. ;

Liu, Z. K. ;

Mo, S. -K. ;

Qi, X. L. ;

Zhang, H. J. ;

Lu, D. H. ;

Dai, X. ;

Fang, Z. ;

Zhang, S. C. ;

Fisher, I. R. ;

Hussain, Z. ;

Shen, Z. -X. .

SCIENCE, 2009, 325 (5937) :178-181

[9] Low-temperature transport properties of Tl-doped Bi2Te3 single crystals [J].

Chi, Hang ;

Liu, Wei ;

Sun, Kai ;

Su, Xianli ;

Wang, Guoyu ;

Lost'ak, Petr ;

Kucek, Vladimir ;

Drasar, Cestmir ;

Uher, Ctirad .

PHYSICAL REVIEW B, 2013, 88 (04)

[10] UNIVERSALITY ASPECTS OF METAL-NONMETAL TRANSITION IN CONDENSED MEDIA [J].

EDWARDS, PP ;

SIENKO, MJ .

PHYSICAL REVIEW B, 1978, 17 (06) :2575-2581

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