High Mobility Two-Dimensional Electron Gas at the BaSnO3/SrNbO3 Interface

被引：13

作者：

Mahatara, Sharad ^{[1
]}

Thapa, Suresh ^{[2
]}

Paik, Hanjong ^{[3
,4
]}

Comes, Ryan ^{[2
]}

Kiefer, Boris ^{[1
]}

机构：

[1] New Mexico State Univ, Dept Phys, Las Cruces, NM 88003 USA

[2] Auburn Univ, Dept Phys, Auburn, AL 36849 USA

[3] Cornell Univ, Platform Accelerated Realizat Anal & Discovery Int, Ithaca, NY 14853 USA

[4] Univ Oklahoma, Sch Elect & Comp Engn, Norman, OK 73019 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2022年 / 14卷 / 39期

基金：

美国国家科学基金会;

关键词：

2DEGS; charge transfer; electron density; heterostructure; conduction band minimum; CONDUCTIVITY;

D O I：

10.1021/acsami.2c12195

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Oxide two-dimensional electron gases (2DEGs) promise high charge carrier concentrations and low-loss electronic transport in semiconductors such as BaSnO3 (BSO). ACBNO computations for BSO/SrNbO3 (SNO) interfaces show Nb-4d electron injection into extended Sn-5s electronic states. The conduction band minimum consists of Sn-5s states similar to 1.2 eV below the Fermi level for intermediate thickness 6-unit cell BSO/6-unit cell SNO superlattices, corresponding to an electron density in BSO of similar to 10(21) cm(-3). Everimental studies of analogous BSO/SNO interfaces grown by molecular beam epitaxy confirm significant charge transfer from SNO to BSO. In situ angle-resolved X-ray photoelectron spectroscopy studies show an electron density of similar to 4 X 10(21) cm(-3). The consistency of theory and experiments show that BSO/SNO interfaces provide a novel materials platform for low loss electron transport in 2DEGs.

引用

页码：45025 / 45031

页数：7

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