An improved temperature compensation technique for current biasing

被引：4
|
作者：
Arbat, A. [1 ]
Dieguez, A. [1 ]
Samitier, J. [1 ]
机构：
[1] Univ Barcelona, Dept Elect, SIC, Barcelona, Spain
来源：
2007 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11 | 2007年
关键词：
D O I：
10.1109/ISCAS.2007.378351
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
A novel current source architecture is presented operating at 1.2 V for low power applications. The source has improved temperature compensation with respect to reported works. The circuit has been designed and fabricated in a 0.13 mu m ultra low power CMOS technology. The output current is 1 mu A with measured variations less than 20 nA from RT up to 70 degrees C.
引用
收藏
页码：1923 / 1926
页数：4
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