Processing and properties of ferroelectric (Bi, La)4(Ti, Ge)3O12 thin films by chemical solution deposition

被引：11
作者：
Sakamoto, W
Mizutani, Y
Iizawa, N
Yogo, T
Hayashi, T
Hirano, S
机构：
[1] Nagoya Univ, Div Nanomat Sci, EcoTopia Sci Inst, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[2] Shonan Inst Technol, Dept Mat Sci & Engn, Kanagawa 2518511, Japan
[3] Nagoya Univ, Grad Sch Engn, Dept Appl Chem, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源：
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2005年 / 25卷 / 12期
关键词：
films; sol-get processes; ferroelectric properties; titanates;
D O I：
10.1016/j.jeurceramsoc.2005.03.205
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Ferroelectric (Bi, La)(4)(Ti, Ge)(3)O-12 thin films have been prepared on Pt/TiOx/SiO2/Si substrates using metal-organic precursor solutions by the chemical solution deposition (CSD). The Bi3.25La0.75Ti2.9Ge0.1O12 (BLTG) precursor films were found to crystallize into the Bi layered perovskite Bi4Ti3O12 (BIT) as a single phase. The synthesized BLTG films revealed a random orientation having strong 0 0 l reflections. The BLTG thin films prepared at 700 degrees C showed a well-saturated P-E hysteresis loop with a remanent polarization, P-r of 12 mu C/cm(2) and a coercive field, E-c of 66 kV/cm at an applied voltage of 5 V. The surface morphology of the BLTG thin films was greatly improved by germanium (Ge) doping compared with that of nondoped Bi3.35La0.75Ti3O12 (BLT) films. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：2305 / 2308
页数：4
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