Contact Doping and Ultrathin Gate Dielectrics for Nanoscale Organic Thin-Film Transistors

被引：118

作者：

Ante, Frederik ^{[1
]}

Kaelblein, Daniel ^{[1
]}

Zschieschang, Ute ^{[1
]}

Canzler, Tobias W. ^{[5
]}

Werner, Ansgar ^{[5
]}

Takimiya, Kazuo ^{[2
]}

Ikeda, Masaaki ^{[3
]}

Sekitani, Tsuyoshi ^{[4
]}

Someya, Takao ^{[4
]}

Klauk, Hagen ^{[1
]}

机构：

[1] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

[2] Hiroshima Univ, Dept Appl Chem, Grad Sch Engn, Inst Adv Mat Res, Higashihiroshima 724, Japan

[3] Nippon Kayaku Co Ltd, Funct Chem R&D Labs, Kita Ku, Tokyo 115, Japan

[4] Univ Tokyo, Dept Elect Engn, Tokyo 113, Japan

[5] Novaled AG, Dresden, Germany

来源：

SMALL | 2011年 / 7卷 / 09期

关键词：

FIELD-EFFECT TRANSISTORS; SELF-ASSEMBLED MONOLAYER; INDUCED PHASE-TRANSITION; NM CHANNEL-LENGTH; ZINC PHTHALOCYANINE; LOW-VOLTAGE; PENTACENE; TETRAFLUOROTETRACYANOQUINODIMETHANE; SEMICONDUCTOR;

D O I：

10.1002/smll.201002254

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

To suppress undesirable short-channel effects in organic transistors with nanoscale lateral dimensions, aggressive gate-dielectric scaling (using an ultra-thin monolayer-based gate dielectric) and area-selective contact doping (using a strong organic dopant) are introduced into organic transistors with channel lengths and gate-to-contact overlaps of about 100 nm. These nanoscale organic transistors have off-state drain currents below 1 pA, on/off current ratios near 107, and clean linear and saturation characteristics. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1186 / 1191

页数：6

共 50 条

[21] Thermal stability of organic thin-film transistors with self-assembled monolayer dielectrics [J].

Fukuda, Kenjiro ;

Yokota, Tomoyuki ;

Kuribara, Kazunori ;

Sekitani, Tsuyoshi ;

Zschieschang, Ute ;

Klauk, Hagen ;

Someya, Takao .

APPLIED PHYSICS LETTERS, 2010, 96 (05)

[22] Functional gate-dielectrics containing naphthyl for organic thin film transistors [J].

Zou, Jiawei ;

Xu, Ting ;

Zhu, Jiufu ;

Shi, Zuosen ;

Wang, Wei ;

Cui, Zhanchen .

ORGANIC ELECTRONICS, 2019, 73 :219-225

[23] Organic thin-film transistors using photocurable acryl-fuctionalized polyhedral oligomeric silsesquioxanes as gate dielectrics [J].

Kim, Yuntae ;

Cho, Hyunduck ;

Kwak, Jeonghun ;

Lee, Jong-Keun ;

Lee, Changhee ;

Hwang, Do-Hoon .

SYNTHETIC METALS, 2012, 162 (21-22) :1798-1803

[24] Solid cross linked-poly(ethylene oxide) electrolyte gate dielectrics for organic thin-film transistors [J].

Cho, Sungmin ;

Kim, Dongkyu ;

Yun, Yeongkyu ;

Lee, Jeongyeon ;

Earmme, Taeshik ;

Seo, SungYong ;

Kim, Choongik .

JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY, 2020, 92 :303-308

[25] Contact Length Scaling in Staggered Organic Thin-Film Transistors [J].

Wang, Hong ;

Wang, Wei ;

Sun, Pengxiao ;

Ma, Xiaohua ;

Li, Ling ;

Liu, Ming ;

Hao, Yue .

IEEE ELECTRON DEVICE LETTERS, 2015, 36 (06) :609-611

[26] Solution-Deposited Organic-Inorganic Hybrid Multilayer Gate Dielectrics. Design, Synthesis, Microstructures, and Electrical Properties with Thin-Film Transistors [J].

Ha, Young-geun ;

Emery, Jonathan D. ;

Bedzyk, Michael J. ;

Usta, Hakan ;

Facchetti, Antonio ;

Marks, Tobin J. .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2011, 133 (26) :10239-10250

[27] Pentacene bottom-contact thin film transistors with solution-processed BZT gate dielectrics [J].

Chou, Dei-Wei ;

Chen, Kuan-Lin ;

Wang, Shih-Feng .

MICROELECTRONICS RELIABILITY, 2018, 91 :323-329

[28] Tetracene thin film transistors with polymer gate dielectrics [J].

Bertolazzi, Simone ;

Wuensche, Julia ;

Cicoira, Fabio ;

Santato, Clara .

APPLIED PHYSICS LETTERS, 2011, 99 (01)

[29] Nanoscale Quantized Oscillations in Thin-Film Growth Greatly Enhance Transconductance in Organic Transistors [J].

Drakopoulou, Sofia ;

Murgia, Mauro ;

Albonetti, Cristiano ;

Benaglia, Simone ;

Borgatti, Francesco ;

Di Lauro, Michele ;

Bianchi, Michele ;

Greco, Pierpaolo ;

Papo, David ;

Garcia, Ricardo ;

Alessandrini, Andrea ;

Biscarini, Fabio .

ADVANCED ELECTRONIC MATERIALS, 2023, 9 (10)

[30] Performance evaluation of top contact PANT Organic Thin Film Transistors with SiO2 and poly(methyl methacrylate) as gate dielectrics [J].

Parameshwara, S. ;

Renukappa, N. M. .

PROCEEDINGS OF THE 2013 IEEE INTERNATIONAL CONFERENCE ON SOLID DIELECTRICS (ICSD 2013), VOLS 1 AND 2, 2013, :568-571

← 1 2 3 4 5 →