Contact Doping and Ultrathin Gate Dielectrics for Nanoscale Organic Thin-Film Transistors

被引：115

作者：

Ante, Frederik ^{[1
]}

Kaelblein, Daniel ^{[1
]}

Zschieschang, Ute ^{[1
]}

Canzler, Tobias W. ^{[5
]}

Werner, Ansgar ^{[5
]}

Takimiya, Kazuo ^{[2
]}

Ikeda, Masaaki ^{[3
]}

Sekitani, Tsuyoshi ^{[4
]}

Someya, Takao ^{[4
]}

Klauk, Hagen ^{[1
]}

机构：

[1] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

[2] Hiroshima Univ, Dept Appl Chem, Grad Sch Engn, Inst Adv Mat Res, Higashihiroshima 724, Japan

[3] Nippon Kayaku Co Ltd, Funct Chem R&D Labs, Kita Ku, Tokyo 115, Japan

[4] Univ Tokyo, Dept Elect Engn, Tokyo 113, Japan

[5] Novaled AG, Dresden, Germany

来源：

SMALL | 2011年 / 7卷 / 09期

关键词：

FIELD-EFFECT TRANSISTORS; SELF-ASSEMBLED MONOLAYER; INDUCED PHASE-TRANSITION; NM CHANNEL-LENGTH; ZINC PHTHALOCYANINE; LOW-VOLTAGE; PENTACENE; TETRAFLUOROTETRACYANOQUINODIMETHANE; SEMICONDUCTOR;

D O I：

10.1002/smll.201002254

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

To suppress undesirable short-channel effects in organic transistors with nanoscale lateral dimensions, aggressive gate-dielectric scaling (using an ultra-thin monolayer-based gate dielectric) and area-selective contact doping (using a strong organic dopant) are introduced into organic transistors with channel lengths and gate-to-contact overlaps of about 100 nm. These nanoscale organic transistors have off-state drain currents below 1 pA, on/off current ratios near 107, and clean linear and saturation characteristics. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1186 / 1191

页数：6

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