MOS interface characterization by cross-sectional STM

被引：1
作者：
Komeda, T
Gwo, S
Tokumoto, H
机构：
[1] JOINT RES CTR ATOM TECHNOL, NATL INST ADV INTERDISCIPLINARY RES, TSUKUBA, IBARAKI 305, JAPAN
[2] JOINT RES CTR ATOM TECHNOL, ANGSTROM TECHNOL PARTNERSHIP, TSUKUBA, IBARAKI 305, JAPAN
来源：
SURFACE SCIENCE | 1996年 / 357卷 / 1-3期
关键词：
low index single crystal surfaces; metal-semiconductor interfaces; scanning tunneling spectroscopies; silicon; silicon oxides; surface electronic phenomena; surface structure; morphology; roughness; and topography;
D O I：
10.1016/0039-6028(96)00053-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The application of tire cross-sectional scanning tunneling microscope (XSTM) to the interface observation of metal-oxide-semiconductor (MOS) structure formed on Si(lll) was described. The STM images revealed the morphology of the MOS interface region where the cleaved Si part showed a novel reconstructed structure of Si(111)-8 x 1 and the metal (Au) layer of similar to 10 nm higher from the Si portion was fractured during the cleaving process. Scanning tunneling spectroscopy (STS) measurement on the Si part showed systematic shifts of the spectra with the application of the bias voltages between the metal and the Si, which agreed well with the expected band bending in the Si qualitatively.
引用
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页码：38 / 41
页数：4
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