GaN-Based Full-Bridge Converter With Digitally Adjustable Voltage Slopes for Characterization of Interwinding Insulation Properties of Magnetic High-Frequency Power Components

被引：1

作者：

Grau, Vivien ^{[1
]}

Wienhausen, Arne Hendrik ^{[1
]}

Kossek, Marcel ^{[1
]}

De Doncker, Rik W. ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Power Elect & Elect Drives, D-52066 Aachen, Germany

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 2021年 / 57卷 / 06期

关键词：

Switches; Voltage; Insulation; Transistors; Thermal resistance; Logic gates; Inductance; Breakdown; device application; gallium nitride (GaN); insulation; wide bandgap (WBG) devices; ELECTRICAL INSULATION; FAILURE-MECHANISM; SYSTEMS;

D O I：

10.1109/TIA.2021.3112508

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The very high switching speed of wide bandgap semiconductor devices enables higher switching frequencies at lower losses. However, it can also cause negative effects on the insulation material. For investigating the effect of steep voltage slopes on interwinding insulation systems, a gallium nitride based full-bridge converter with digitally adjustable voltage slopes is developed and presented within this article.

引用

页码：6288 / 6294

页数：7

共 25 条

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