Low-threshold operation of 1.34-μm GaInNAsVCSEL grown by MOVPE

被引：17

作者：

Yamada, M ^{[1
]}

Anan, T ^{[1
]}

Hatakeyama, H ^{[1
]}

Tokutome, K ^{[1
]}

Suzuki, N ^{[1
]}

Nakamura, T ^{[1
]}

Nishi, K ^{[1
]}

机构：

[1] NEC Corp Ltd, Syst Devices Res Labs, Shiga 5200833, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 05期

关键词：

coarse wavelength-division multiplexing (CWDM); GaInNAs; metal-organic vapor-phase epitaxy (MOVPE); vertical-cavity surface-emitting laser (VCSEL);

D O I：

10.1109/LPT.2005.844325

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-threshold operation was demonstrated for a 1.34-mu m vertical-cavity surface-emitting laser (VCSEL) with GaInNAs quantum wells (QWs) grown by metal-organic vapor-phase epitaxy. Optimizing the growth conditions and QW structure of the GaInNAs active layers resulted in edge-emitting lasers that oscillated with low threshold current densities of 0.87 kA/cm(2) at 1.34 mu m and 1.1 kA/cm(2) at 1.38 mu m, respectively. The VCSEL had a low threshold current of 2.8 mA and a lasing wavelength of 1.342 mu m at room temperature and operated up to 60 degrees C.

引用

页码：950 / 952

页数：3

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