Low-threshold operation of 1.34-μm GaInNAsVCSEL grown by MOVPE

被引：17
作者：
Yamada, M [1 ]
Anan, T [1 ]
Hatakeyama, H [1 ]
Tokutome, K [1 ]
Suzuki, N [1 ]
Nakamura, T [1 ]
Nishi, K [1 ]
机构：
[1] NEC Corp Ltd, Syst Devices Res Labs, Shiga 5200833, Japan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 05期
关键词：
coarse wavelength-division multiplexing (CWDM); GaInNAs; metal-organic vapor-phase epitaxy (MOVPE); vertical-cavity surface-emitting laser (VCSEL);
D O I：
10.1109/LPT.2005.844325
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-threshold operation was demonstrated for a 1.34-mu m vertical-cavity surface-emitting laser (VCSEL) with GaInNAs quantum wells (QWs) grown by metal-organic vapor-phase epitaxy. Optimizing the growth conditions and QW structure of the GaInNAs active layers resulted in edge-emitting lasers that oscillated with low threshold current densities of 0.87 kA/cm(2) at 1.34 mu m and 1.1 kA/cm(2) at 1.38 mu m, respectively. The VCSEL had a low threshold current of 2.8 mA and a lasing wavelength of 1.342 mu m at room temperature and operated up to 60 degrees C.
引用
收藏
页码：950 / 952
页数：3
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