Influence of thickness on field emission characteristics of AlN thin films

被引：11
|
作者：
Wang, YX
Li, YA
Feng, W
Li, WQ
Zhao, CH
Liu, LH
Feng, KC
Zhao, YN [1 ]
机构：
[1] Jilin Univ, Natl Key Lab Super Hard Mat, Changchun 130021, Peoples R China
[2] Changchun Univ Sci & Technol, Coll Sci, Changchun 130022, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2005年 / 243卷 / 1-4期
关键词：
aluminum nitride; thin films; field emission; current emission; turn-on electric field;
D O I：
10.1016/j.apsusc.2004.09.111
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Aluminum nitride (AIN) thin films with various thicknesses (20-150 nm) are prepared on substrate Si(1 0 0) by radio-frequency (rf) magnetic reactive sputtering in an Ar-N-2, gas mixture. The field emission characteristics of the AIN thin films are measured in an ultra-high vacuum system. They depend evidently on the thicknesses. There is an optimum film thickness for the best field emission characteristics of AIN thin films. A turn-on electric field of 10 V/mu m and the highest emission current density of 284 mu A/cm(2) at an electric field of 35 V/mu m are obtained for the about 44-nm-thick AIN film. The Fowler-Nordheim plots show that electrons are emitted from AIN to vacuum by tunneling through the potential barrier at the surface of AIN thin films. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：394 / 400
页数：7
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