Effect of Ga Doping on Transparent and Conductive Al-Doped ZnO Films Prepared Using Magnetron Cosputtering

被引：15

作者：

Kang, Dong-Won ^{[1
]}

Kim, Sun-Jae ^{[1
]}

Moon, Tae-Ho ^{[2
]}

Lee, Heon-Min ^{[2
]}

Han, Min-Koo ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea

[2] LG Elect, Seoul 137724, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 12期

关键词：

OXIDE THIN-FILMS; OPTICAL-PROPERTIES; SILICON; RF;

D O I：

10.1143/JJAP.49.125801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al-doped ZnO (AZO) films with various Ga contents were prepared by magnetron co-sputtering in order to investigate the effect of Ga additions on the structural and optoelectronic characteristics of AZO films. The appropriate Ga doping level improved the crystallinity of the AZO films, investigated by X-ray diffraction analysis. The resistivity of AZO films decreased from 3.5 x 10(-3) to 8.1 x 10(-4) Omega cm by Ga doping at 2.1 at. %. The Hall mobility was improved by enhancing the polycrystalline growth of the films. The carrier concentration was increased by Ga doping, which was activated as an extrinsic donor. At a further increase in the Ga content of more than 2.1 at. %, the crystallinity and resistivity of the Ga-doped AZO films deteriorated. The optical band gap was increased, and the transmittance in the visible region was increased from 86.7 to 91.0% using the same level of Ga doping at 2.1 at. %. (C) 2010 The Japan Society of Applied Physics

引用

页数：5

共 24 条

[1] Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique [J].

Al Asmar, R ;

Juillaguet, S ;

Ramonda, M ;

Giani, A ;

Combette, P ;

Khoury, A ;

Foucaran, A .

JOURNAL OF CRYSTAL GROWTH, 2005, 275 (3-4) :512-520

[2] The effect of front ZnO:Al surface texture and optical transparency on efficient light trapping in silicon thin-film solar cells [J].

Berginski, Michael ;

Huepkes, Juergen ;

Schulte, Melanie ;

Schoepe, Gunnar ;

Stiebig, Helmut ;

Rech, Bernd ;

Wuttig, Matthias .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (07)

[3] Sol-gel-prepared ITO films for electrochromic systems [J].

Djaoued, Y ;

Phong, VH ;

Badilescu, S ;

Ashrit, PV ;

Girouard, FE ;

Truong, VV .

THIN SOLID FILMS, 1997, 293 (1-2) :108-112

[4] GRAIN-BOUNDARY SCATTERING IN ALUMINUM-DOPED ZNO FILMS [J].

GHOSH, S ;

SARKAR, A ;

CHAUDHURI, S ;

PAL, AK .

THIN SOLID FILMS, 1991, 205 (01) :64-68

[5] TEXTURED ALUMINUM-DOPED ZINC-OXIDE THIN-FILMS FROM ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR DEPOSITION [J].

HU, JH ;

GORDON, RG .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (02) :880-890

[6] OPTICAL-PROPERTIES OF SPUTTER-DEPOSITED ZNO-AL THIN-FILMS [J].

JIN, ZC ;

HAMBERG, I ;

GRANQVIST, CG .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (10) :5117-5131

[7] Highly Transparent and High Haze Bilayer Al-Doped ZnO Thin Film Employing Oxygen-Controlled Seed Layer [J].

Kang, Dong-Won ;

Kuk, Seung-Hee ;

Ji, Kwang-Sun ;

Ahn, Seh-Won ;

Han, Min-Koo .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (03)

[8] Electrical Resistivity and Transmittance Properties of Al- and Ga-codoped ZnO Thin Films [J].

Kang, Jungwoo ;

Kim, Hyoun Woo ;

Lee, Chongmu .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 56 (02) :576-579

[9] Structural and morphological properties of ZnO:Ga thin films [J].

Khranovskyy, V. ;

Grossner, U. ;

Nilsen, O. ;

Lazorenko, V. ;

Lashkarev, G. V. ;

Svensson, B. G. ;

Yakimova, R. .

THIN SOLID FILMS, 2006, 515 (02) :472-476

[10] Transparent conducting aluminum-doped zinc oxide thin films for organic light-emitting devices [J].

Kim, H ;

Gilmore, CM ;

Horwitz, JS ;

Piqué, A ;

Murata, H ;

Kushto, GP ;

Schlaf, R ;

Kafafi, ZH ;

Chrisey, DB .

APPLIED PHYSICS LETTERS, 2000, 76 (03) :259-261

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