FULLY CMOS-COMPATIBLE WAFER BONDING BASED ON PRESS MARKING USING THICK ELECTROPLATED ALUMINUM

被引：0

作者：

Al Farisi, Muhammad Salman ^{[1
,2
]}

Tsukamoto, Takashiro ^{[1
]}

Tanaka, Shuji ^{[1
]}

机构：

[1] Tohoku Univ, Sendai, Miyagi, Japan

[2] Hiroshima City Univ, Hiroshima, Japan

来源：

2021 21ST INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS (TRANSDUCERS) | 2021年

基金：

日本学术振兴会;

关键词：

Wafer bonding; aluminum; electroplating; press marking;

D O I：

10.1109/TRANSDUCERS50396.2021.9495544

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Aluminum has a great potential as a wafer bonding material due to its inherent compatibility with the complimentary metal oxide semiconductor (CMOS) processes. In this study, a novel wafer bonding technique for heterogeneous integration using electroplated Al bonding frame is demonstrated for the first time. The Al frames were deposited by electroplating from a chloroaluminate ionic liquid. The electroplated Al bonding frames were mechanically deformed by the groove structures on the counter wafer, i.e. press marking Such a large mechanical deformation enabled the wafer bonding at a temperature of as low as 250 degrees C, which is the lowest value that has ever been reported for the Al bonding. The influence of the bonding temperature to the quality of the bonded substrates were evaluated. The bonding shear strength of 8-100 MPa was obtained, which is in par with the other established techniques.

引用

页码：1138 / 1141

页数：4

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