Nano Device Simulator-A Practical Subband-BTE Solver for Path-Finding and DTCO

被引：16

作者：

Stanojevic, Zlatan ^{[1
]}

Tsai, Chen-Ming ^{[1
]}

Strof, Georg ^{[1
]}

Mitterbauer, Ferdinand ^{[1
]}

Baumgartner, Oskar ^{[1
]}

Kernstock, Christian ^{[1
]}

Karner, Markus ^{[1
]}

机构：

[1] Global TCAD Solut GmbH, A-1010 Vienna, Austria

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 11期

关键词：

Trajectory; Mathematical model; Scattering; Numerical models; Nanoscale devices; Tunneling; Indexes; Design-technology co-optimization; device simulation; path-finding; subband Boltzmann transport; TCAD; INVERSION LAYER MOBILITY; SI MOSFETS; TRANSPORT; UNIVERSALITY;

D O I：

10.1109/TED.2021.3079884

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an in-depth discussion on the subband Boltzmann transport (SBTE) methodology, its evolution, and its application to the simulation of nanoscale MOSFETs. The evolution of the method is presented from the point of view of developing a commercial general-purpose SBTE solver, the GTS nano device simulator (NDS). We show a wide range of applications SBTE is suited for, including state-of-the-art nonplanar and well-established planar technologies. It is demonstrated how SBTE can be employed both as a path-finding tool and a fundamental component in a DTCO-flow.

引用

页码：5400 / 5406

页数：7

共 25 条

[1] First Demonstration of Vertically Stacked Gate-All-Around Highly Strained Germanium Nanowire pFETs [J].