Microstructure and growth mechanism of SiC nanowires with periodically fluctuating hexagonal prisms by CVD

被引：31

作者：

Chu, Yanhui ^{[1
]}

Fu, Qiangang ^{[1
]}

Zhang, Zhengzhong ^{[1
]}

Li, Hejun ^{[1
]}

Li, Kezhi ^{[1
]}

Lei, Qin ^{[1
]}

机构：

[1] NW Polytech Univ, Carbon Carbon Composites Res Ctr, State Key Lab Solidificat Proc, Xian 710072, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 508卷 / 02期

基金：

中国国家自然科学基金;

关键词：

Silicon carbide; Nanowires; Microstructure; Crystal growth; FIELD-EMISSION PROPERTIES; CARBOTHERMAL REDUCTION; SILICON-CARBIDE; ACTIVATED CARBON; NANORODS; NANOFIBERS; MORPHOLOGY;

D O I：

10.1016/j.jallcom.2010.08.127

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

SiC nanowires with periodically fluctuating hexagonal prisms were synthesized on graphite substrates by a simple and economical technique of chemical vapor deposition in an Ar atmosphere without catalyst assistant. The morphology and structure of SiC nanowires were characterized by X-ray diffraction, Raman scattering spectrum, scanning electron microscopy and transmission electron microscopy. The results showed that the as-synthesized SiC nanowires possessed well crystalled beta-SiC, and were composed of periodically fluctuating hexagonal prisms along their whole length with the [1 1 1] growth direction. The growth of SiC nanowires with periodically fluctuating hexagonal prisms was governed by vapor-solid mechanism. (c) 2010 Elsevier B.V. All rights reserved.

引用

页码：L36 / L39

页数：4

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