Microstructure and growth mechanism of SiC nanowires with periodically fluctuating hexagonal prisms by CVD

被引:31
作者
Chu, Yanhui [1 ]
Fu, Qiangang [1 ]
Zhang, Zhengzhong [1 ]
Li, Hejun [1 ]
Li, Kezhi [1 ]
Lei, Qin [1 ]
机构
[1] NW Polytech Univ, Carbon Carbon Composites Res Ctr, State Key Lab Solidificat Proc, Xian 710072, Peoples R China
基金
中国国家自然科学基金;
关键词
Silicon carbide; Nanowires; Microstructure; Crystal growth; FIELD-EMISSION PROPERTIES; CARBOTHERMAL REDUCTION; SILICON-CARBIDE; ACTIVATED CARBON; NANORODS; NANOFIBERS; MORPHOLOGY;
D O I
10.1016/j.jallcom.2010.08.127
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
SiC nanowires with periodically fluctuating hexagonal prisms were synthesized on graphite substrates by a simple and economical technique of chemical vapor deposition in an Ar atmosphere without catalyst assistant. The morphology and structure of SiC nanowires were characterized by X-ray diffraction, Raman scattering spectrum, scanning electron microscopy and transmission electron microscopy. The results showed that the as-synthesized SiC nanowires possessed well crystalled beta-SiC, and were composed of periodically fluctuating hexagonal prisms along their whole length with the [1 1 1] growth direction. The growth of SiC nanowires with periodically fluctuating hexagonal prisms was governed by vapor-solid mechanism. (c) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:L36 / L39
页数:4
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