Overdamped NbN junctions with NbNx barriers formed by plasma nitridation

被引：4

作者：

Akaike, H ^{[1
]}

Yoshizawa, K ^{[1
]}

Oke, R ^{[1
]}

Fujimaki, A ^{[1
]}

Hayakawa, H ^{[1
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 46401, Japan

来源：

APPLIED SUPERCONDUCTIVITY | 1997年 / 5卷 / 7-12期

关键词：

D O I：

10.1016/S0964-1807(98)00006-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have fabricated NbN Josephson junctions with NbN, barriers formed by plasma nitridation on the surface of the base superconductive NbN layer. Both nonhysteretic junctions (overdamped junctions) and small-hysteretic ones have been obtained at 4.2 K by changing plasma nitridation conditions. An overdamped junction showed a product of the critical current I-c and junction resistance R-n (an IcRn product) of 0.95 mV at 4.2 K and the I-c exponentially decreased with increasing temperature. On the other hand, a small-hysteretic junction showed Superconductor-Insulator-Superconductor (SIS)like characteristics in the temperature dependence of I-c and its current-voltage characteristics changed to nonhysteretic ones at the temperature more than 8 K. The IcRn product for the junction was 0.91 mV at 8.2 K. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：319 / 325

页数：7

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