Preparation of Al thin films charged with helium by DC magnetron sputtering

被引：16

作者：

Jia, Jian-ping

Shi, Li-qun

Lai, Xin-chun

Wang, Qing-fu

机构：

[1] State Key Lab Surface Phys & Chem, Mianyang 621900, Peoples R China

[2] Fudan Univ, Inst Modern Phys, Appl Ion Beam Phys Lab, Shanghai 200433, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 263卷 / 02期

关键词：

magnetron sputtering; helium bubble; transmission electron microscopy;

D O I：

10.1016/j.nimb.2007.06.022

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Helium atoms, up to 6.9 at.%, were introduced into Al films by DC magnetron sputtering in a He/Ar mixed atmosphere and distributed evenly in it. The relation between the He/Ar flux ratio, bias voltage, substrate temperature and helium concentration is studied. The helium concentration can be easily controlled by change of the process parameters and it greatly affects the morphology of film. TEM analysis suggests that small helium bubbles with a diameter of 1 nm are formed in the grain. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：446 / 450

页数：5

共 7 条

[1] INERT-GASES IN SPUTTERED TUNGSTEN - A TEST OF PREDICTIVE CAPABILITY [J].