Stable and fast simulation of semiconductor lasers

被引:0
|
作者
Kong, J [1 ]
Yu, ZP [1 ]
Yang, ZL [1 ]
机构
[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VI, PTS 1 AND 2 | 1998年 / 3283卷
关键词
quantum well lasers; device simulation; two-dimension; temperature effect; equation group; algorithm; multimode; buried heterostructure;
D O I
10.1117/12.316673
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new method which is very stable and fast, has been developed, to self-consistently solve the electric equations, scalar Helmholtz equation and photon rate equation, This method is based on a new concept, control equation, so that high efficient algorithms for the lion-linear single-variable equation can be applied to control the solution procedure. Above threshold, tremendous improvement in speed and stability was obtained. Multiple spectral mode behavior can be simulated with the same efficiency of single-mode simulation, owning to the inclusion of the control equation concept. This 2D simulator works well even for very high bias. This method has the potential to be applied to the simulation of a wide variety of semiconductor lasers. In addition, the carrier energy transport and lattice thermal diffusion are accounted for. The finite element method is applied to the Helmholtz equation. The generalized eigenvalue problem thus generated is solved directly and quickly by a kind of Lanczos algorithm. The discretization of all fundamental equations is on the same triangular element mesh. Simulation of a GRIN-SCH BH SQW laser shows good agreement with the experimental data.
引用
收藏
页码:396 / 403
页数:2
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