Stable and fast simulation of semiconductor lasers

被引:0
|
作者
Kong, J [1 ]
Yu, ZP [1 ]
Yang, ZL [1 ]
机构
[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VI, PTS 1 AND 2 | 1998年 / 3283卷
关键词
quantum well lasers; device simulation; two-dimension; temperature effect; equation group; algorithm; multimode; buried heterostructure;
D O I
10.1117/12.316673
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new method which is very stable and fast, has been developed, to self-consistently solve the electric equations, scalar Helmholtz equation and photon rate equation, This method is based on a new concept, control equation, so that high efficient algorithms for the lion-linear single-variable equation can be applied to control the solution procedure. Above threshold, tremendous improvement in speed and stability was obtained. Multiple spectral mode behavior can be simulated with the same efficiency of single-mode simulation, owning to the inclusion of the control equation concept. This 2D simulator works well even for very high bias. This method has the potential to be applied to the simulation of a wide variety of semiconductor lasers. In addition, the carrier energy transport and lattice thermal diffusion are accounted for. The finite element method is applied to the Helmholtz equation. The generalized eigenvalue problem thus generated is solved directly and quickly by a kind of Lanczos algorithm. The discretization of all fundamental equations is on the same triangular element mesh. Simulation of a GRIN-SCH BH SQW laser shows good agreement with the experimental data.
引用
收藏
页码:396 / 403
页数:2
相关论文
共 50 条
  • [1] Physics and simulation of semiconductor lasers
    Koch, SW
    2005 CONFERENCE ON LASERS & ELECTRO-OPTICS (CLEO), VOLS 1-3, 2005, : 716 - 718
  • [2] Simulation of semiconductor quantum well lasers
    Alam, MA
    Hybertsen, MS
    Smith, RK
    Baraff, GA
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (10) : 1917 - 1925
  • [3] Microscopic simulation of semiconductor lasers at telecommunication wavelengths
    Thraenhardt, A.
    Bueckers, C.
    Schlichenmaier, C.
    Kuznetsova, I.
    Koch, S. W.
    Hader, J.
    Moloney, J. V.
    OPTICAL AND QUANTUM ELECTRONICS, 2006, 38 (12-14) : 1005 - 1009
  • [4] Microscopic simulation of semiconductor lasers at telecommunication wavelengths
    A. Thränhardt
    C. Bückers
    C. Schlichenmaier
    I. Kuznetsova
    S. W. Koch
    J. Hader
    J. V. Moloney
    Optical and Quantum Electronics, 2006, 38 : 1005 - 1009
  • [5] Modeling semiconductor lasers: simulation of devices based on microscopic physics
    Moloney, JV
    Kolesik, M
    Matus, M
    Kasunic, KJ
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VIII, PTS 1 AND 2, 2000, 3944 : 294 - 300
  • [6] Semiconductor snail lasers
    Strain, M. J.
    Mezosi, G.
    Javaloyes, J.
    Sorel, M.
    Perez-Serrano, A.
    Scire, A.
    Balle, S.
    Danckaert, J.
    Verschaffelt, G.
    APPLIED PHYSICS LETTERS, 2010, 96 (12)
  • [7] SEMICONDUCTOR-LASERS FOR OPTICAL COMMUNICATION
    SRIVASTAVA, AK
    BULLETIN OF MATERIALS SCIENCE, 1990, 13 (1-2) : 151 - 159
  • [8] Large-signal simulation of semiconductor lasers on device level: numerical aspects of the harmonic balance method
    Bernhard Schmithüsen
    Stefan Odermatt
    Bernd Witzigmann
    Optical and Quantum Electronics, 2008, 40 : 355 - 360
  • [9] Large-signal simulation of semiconductor lasers on device level:: numerical aspects of the harmonic balance method
    Schmithuesen, Bernhard
    Odermatt, Stefan
    Witzigmann, Bernd
    OPTICAL AND QUANTUM ELECTRONICS, 2008, 40 (5-6) : 355 - 360
  • [10] Fast and Stable Transient Simulation of Nonlinear Circuits Using the Numerical Inversion of the Laplace Transform
    Bandali, Bardia
    Gad, Emad
    Nakhla, Michel
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2022, 12 (07): : 1171 - 1185