Photoluminescence and micro-imaging study of optically anisotropic InP self-assembled quantum dots

被引：6
作者：
Sugisaki, M
Ren, HW
Nishi, K
Masumoto, Y
机构：
[1] ERATO, JST, Tsukuba Res Consortium, Single Quantum Dot Project, Tsukuba, Ibaraki 3002635, Japan
[2] NEC Corp Ltd, Photon & Wireless Devices Res Labs, Tsukuba, Ibaraki 3058501, Japan
[3] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 3058571, Japan
来源：
SOLID STATE COMMUNICATIONS | 2001年 / 117卷 / 11期
关键词：
nanostructures; crystal structure and symmetry; optical properties; luminescence;
D O I：
10.1016/S0038-1098(00)00502-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The optical properties of InP self-assembled quantum dots (SADs) were investigated under band-to-band excitation of the Ga0.5In0.5P matrix by means of macro- (conventional) and micro-photoluminescence (mu -PL) spectroscopy. Wt: clearly observed that the number of bright spots in the mu -PL images of InP SADs depends on the detection energy. reflecting the sire distribution of the SADs. The macro-photoluminescence spectra and mu -PL images of the InP SADs were found to exhibit a strong optical anisotropy with two-fold symmetry. which reflects the anisotropic structure of the Ga0.5In0.5P matrix due to the Cu-Pt-B type long-range ordering. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：679 / 684
页数：6
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