Structural effects on optoelectronic properties of halide perovskites

被引:111
作者
Chen, Kun [1 ]
Schuenemann, Stefan [2 ]
Song, Seulki [2 ]
Tueysuez, Harun [2 ]
机构
[1] Beijing Inst Technol, Sch Mat Sci & Engn, 5 South Zhongguancun St, Beijing 100081, Peoples R China
[2] Max Planck Inst Kohlenforsch, Kaiser Wilhelm Pl 1, D-45470 Mulheim, Germany
关键词
CESIUM LEAD HALIDE; LIGHT-EMITTING-DIODES; DEFECT-TOLERANT SEMICONDUCTORS; ORGANIC-INORGANIC PEROVSKITE; LIGAND-MEDIATED SYNTHESIS; CHARGE-CARRIER DYNAMICS; COLLOIDAL CH3NH3PBX3 X; ROOM-TEMPERATURE; QUANTUM DOTS; SOLAR-CELLS;
D O I
10.1039/c8cs00212f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Halide perovskites have prompted the evolution of the photovoltaic field and simultaneously demonstrated their great potential for application in other optoelectronic devices. A fundamental understanding of their structure-property relationship is essential to fabricate novel materials and high-performance devices. This review gives a perspective on different synthetic methodologies for the preparation of halide perovskites and highlights the effects of structural factors such as crystal structure, grain size, nanoscale dimensionality, patterned arrangement, and hierarchical structure on their optoelectronic properties. The main emphasis is given to 0D, 1D and 2D nanostructured materials including their common synthesis methods and key structural properties. Structural factors should be precisely controlled during the material preparation and device fabrication to improve the performance of targeted applications.
引用
收藏
页码:7045 / 7077
页数:33
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