Aging-Dependent Electrical Properties in Polymer-Passivated ZnO Nanowire Field Effect Transistors

被引：1
|
作者：
Hong, Woong-Ki [1 ]
机构：
[1] Korea Basic Sci Inst, Jeonju Ctr, Jeonju 561756, South Korea
来源：
ECS SOLID STATE LETTERS | 2015年 / 4卷 / 04期
基金：
新加坡国家研究基金会;
关键词：
THIN-FILM TRANSISTORS; PHOTODETECTORS; NANOROD;
D O I：
10.1149/2.0081504ssl
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Aging-dependent electrical properties in poly(methyl methacrylate) (PMMA)-passivated ZnO nanowire field effect transistors, which show an enhancement-mode behavior, were investigated. The electrical characteristics of the devices were systematically measured and compared before and after storage in a vacuum desiccator for 8 months. The electrical properties of the aged devices, such as mobility, subthreshold swing, and carrier density, were greatly improved compared with those of the as-fabricated devices. This can be attributed to desorption effects of adsorbed molecules on the nanowire surface in which the adsorbed molecules can transport through a PMMA passivation layer under vacuum. (C) The Author(s) 2015. Published by ECS. All rights reserved.
引用
收藏
页码：Q17 / Q20
页数：4
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