机构:
Georgia Inst Technol, Sch Elect & Comp Engn, Integrated MEMS Lab, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Elect & Comp Engn, Integrated MEMS Lab, Atlanta, GA 30332 USA
Hao, ZL
[1
]
Ayazi, F
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Elect & Comp Engn, Integrated MEMS Lab, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Elect & Comp Engn, Integrated MEMS Lab, Atlanta, GA 30332 USA
Ayazi, F
[1
]
机构:
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Integrated MEMS Lab, Atlanta, GA 30332 USA
来源:
MEMS 2005 Miami: Technical Digest
|
2005年
关键词:
D O I:
10.1109/MEMSYS.2005.1453886
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
In light of recent efforts to implement micromechanical resonators with high-Q and high frequency, an analytical model for support loss in micromechanical disk resonators has been developed and verified with experimental results. The derived model is general and applicable to various structures and support schemes (side-supported and center-supported disks), providing significant insight to the geometrical design and choice of materials in high-Q disk resonant structures. The methodology presented in this paper can be extended to evaluate support loss in other high-frequency bulk-mode structures such as length-extensional blocks and bars.