Island nucleation and growth on reconstructed GaAs(001) surfaces

被引：136
作者：
Itoh, M [1 ]
Bell, GR
Avery, AR
Jones, TS
Joyce, BA
Vvedensky, DD
机构：
[1] Univ London Imperial Coll Sci Technol & Med, Interdisciplinary Res Ctr Semicond Mat, London SW7 2BZ, England
[2] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AY, England
[3] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2BZ, England
来源：
PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 03期
关键词：
D O I：
10.1103/PhysRevLett.81.633
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The initial stages of homoepitaxy on GaAs(001) are studied with atomic-resolution scanning tunneling microscopy and Monte Carlo simulations that include the zinc blende structure of GaAs, the (2 x 4) reconstruction of the (001) surface, and the kinetics of As-2 incorporation. The reconstruction is found to favor nucleation on the top-layer arsenic dimers and to cause small islands to be unstable until they adopt the local (2 x 4) structure.
引用
收藏
页码：633 / 636
页数：4
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