Nitrogen Dopants in Carbon Nanomaterials: Defects or a New Opportunity?

被引:231
作者
Lee, Won Jun [1 ,2 ]
Lim, Joonwon [1 ]
Kim, Sang Ouk [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Ctr Multidimens Directed Nanoscale Assembly, Natl Creat Res Initiat CRI, Daejeon 34141, South Korea
[2] Imperial Coll London, Dept Chem, London SW7 2AZ, England
基金
新加坡国家研究基金会;
关键词
ORGANIC SOLAR-CELLS; OXYGEN REDUCTION; DOPED GRAPHENE; TRANSPORT ENHANCEMENT; ACTIVE-SITES; NANOTUBES; DISSOCIATION; ELECTRON; GROWTH; OXIDE;
D O I
10.1002/smtd.201600014
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Substitutional N-doping of carbon nanomaterials refers to the chemical functionalization method that replaces a part of the carbon atoms in fullerene, carbon nanotubes, or graphene by nitrogen. N-doping has attracted a tremendous amount of research attention for their unique possibilities, spanning from its ability to engineer various physiochemical properties of carbon nanomaterials in a stable manner with different dopant configurations. Many viable configurations of N-dopants are accompanied by typical structural defects, while still preserving the structural symmetry in the basal graphitic plane. Here, the physicochemical features are highlighted and the exciting challenges of N-dopants in carbon nanomaterials identified, with particular emphasis on the broad tunability of the material properties and relevant emerging applications.
引用
收藏
页码:1 / 2
页数:9
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