Roles of polarization effects in InGaN/GaN solar cells and comparison of p-i-n and n-i-p structures

被引:8
|
作者
Wang, Kun [1 ,2 ]
Wang, Quan [1 ]
Chu, Jiayan [1 ,2 ]
Xiao, Hongling [1 ,2 ]
Wang, Xiaoliang [1 ,2 ]
Wang, Zhanguo [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Sch Microelect, Beijing 100049, Peoples R China
来源
OPTICS EXPRESS | 2018年 / 26卷 / 22期
关键词
PIEZOELECTRIC POLARIZATION; HETEROSTRUCTURES; SEMICONDUCTORS; EFFICIENCY; CHARGE; GAN;
D O I
10.1364/OE.26.00A946
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The p-i-n and n-i-p InGaN/GaN solar cells (SCs) with Ga-face and N-face under different Indium composition were investigated and compared. From the charge distribution analysis, it can be deduced that if p-i-n was converted to n-i-p and the polarity of the SC was reversed simultaneously, or vice versa, the role of polarization effect (i.e. whether hinder or facilitate the photon-generated carriers transport) for the two SC structures would be resembling, though they had difference in degrees. The SC performance, energy band diagram at zero bias condition, recombination rate distribution and carrier concentration distribution of these SCs were analyzed, which suggested that although the polarization effect could facilitate the carrier transport both in p-i-n N-face SC and n-i-p Ga-face SC, the p-i-n N-face SC was apt to have better performance more or less if the barrier induced by bandoffset at the hetero-interface would not block the carrier transport dominantly, e.g. when Indium content was less than or equal to 0.3. Besides, the high Indium content would result in the high band-offset barrier, and the barrier would affect the carrier transport in two ways, one was to hamper the carrier transport directly, and the other was to influence the electric field in i-region indirectly. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:A946 / A954
页数:9
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