Robust Fabry-Perot interference in dual-gated Bi2Se3 devices

被引：8

作者：

Finck, A. D. K. ^{[1
,2
]}

Kurter, C. ^{[1
,2
,3
]}

Huemiller, E. D. ^{[1
,2
]}

Hor, Y. S. ^{[3
]}

Van Harlingen, D. J. ^{[1
,2
]}

机构：

[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

[2] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA

[3] Missouri Univ Sci & Technol, Dept Phys, Rolla, MO 65409 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 20期

基金：

美国国家科学基金会;

关键词：

SURFACE; STATE; OSCILLATIONS;

D O I：

10.1063/1.4949490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study Fabry-Perot interference in hybrid devices, each consisting of a mesoscopic superconducting disk deposited on the surface of a three-dimensional topological insulator. Such structures are hypothesized to contain protected zero modes known as Majorana fermions bound to vortices. The interference manifests as periodic conductance oscillations of magnitude similar to 0.1 e(2)/h. These oscillations show no strong dependence on bulk carrier density or sample thickness, suggesting that they result from phase coherent transport in surface states. However, the Fabry-Perot interference can be tuned by both top and back gates, implying strong electrostatic coupling between the top and bottom surfaces of topological insulator. Published by AIP Publishing.

引用

页数：4

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