Enhanced ferroelectric properties in Mn-doped K0.5Na0.5NbO3 thin films derived from chemical solution deposition

被引：62

作者：

Wang, Lingyan ^{[1
]}

Ren, Wei ^{[1
]}

Shi, Peng ^{[1
]}

Chen, Xiaofeng ^{[1
]}

Wu, Xiaoqing ^{[1
]}

Yao, Xi ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab Minist Educ, Xian 710049, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 07期

关键词：

current density; dielectric hysteresis; dielectric losses; doping; ferroelectric materials; ferroelectric thin films; leakage currents; manganese; permittivity; piezoelectric materials; piezoelectric thin films; potassium compounds; sodium compounds; vacancies (crystal); DIELECTRIC-PROPERTIES; ELECTRICAL-PROPERTIES; SINGLE-CRYSTAL; CERAMICS;

D O I：

10.1063/1.3479530

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mn-doped K0.5Na0.5NbO3 (KNN) thin films derived from chemical solution deposition have been investigated. 2 mol % manganese acetate was introduced into the polyvinylpyrrolidone-modified KNN precursor solution to prepare the KNN thin films. It was found that Mn doping can increase the dielectric constant and decrease the dielectric loss, as well as significantly decrease the leakage current. The leakage current density of Mn-doped KNN film is about 3 x 10(-6) A/cm(2) at an electric field of 50 kV/cm, which is 10(4) times lower than that of the undoped film (about 3 x 10(-2) A/cm(2)). These are attributed to the decrease in the concentration in oxygen vacancies and free carrier-holes by increasing the valence of Mn during thermal treatment. As a result, well saturated polarization-electric field hysteresis loops were obtained in the Mn-doped KNN thin films. (C) 2010 American Institute of Physics. [doi:10.1063/1.3479530]

引用

页数：3

共 27 条

[1] Effect of manganese doping on remnant polarization and leakage current in (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 epitaxial thin films on SrTiO3 [J].

Abazari, M. ;

Akdogan, E. K. ;

Safaria, A. .

APPLIED PHYSICS LETTERS, 2008, 92 (21)

[2] Preparation and characterization of (K0.5Na0.5)NbO3 ceramics [J].

Birol, H ;

Damjanovic, D ;

Setter, N .

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2006, 26 (06) :861-866

[3] Background oxygen effects on pulsed laser deposited Na0.5K0.5NbO3 films:: From superparaelectric state to ferroelectricity [J].

Cho, CR ;

Grishin, A .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :4439-4448

[4] PIEZOELECTRIC AND DIELECTRIC PROPERTIES OF CERAMICS IN THE SYSTEM POTASSIUM SODIUM NIOBATE [J].

EGERTON, L ;

DILLON, DM .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1959, 42 (09) :438-442

[5] Enhanced dielectric properties of lead barium zirconate thin films by manganese doping [J].

Hao, Xihong ;

Zhai, Jiwei ;

Zhou, Jing ;

Li, Xiaowei ;

Song, Xiwen ;

An, Shengli .

APPLIED SURFACE SCIENCE, 2010, 256 (16) :4902-4905

[6] Dopant influence on dielectric losses, leakage behaviour, and resistance degradation of SrTiO3 thin films [J].

Hofman, W ;

Hoffmann, S ;

Waser, R .

THIN SOLID FILMS, 1997, 305 (1-2) :66-73

[7] HOT PRESSING OF POTASSIUM-SODIUM NIOBATES [J].

JAEGER, RE ;

EGERTON, L .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1962, 45 (05) :209-213

[8] Enhanced dielectric characteristics of preferential (111)-oriented BZT thin films by manganese doping [J].

Jie, W. J. ;

Zhu, J. ;

Qin, W. F. ;

Wei, X. H. ;

Xiong, J. ;

Zhang, Y. ;

Bhalla, A. ;

Li, Y. R. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (09) :2854-2857

[9] Dielectric properties of Mn-doped BST thin films for microwave application [J].

Kim, RY ;

Kim, HS ;

Lim, MH ;

Kim, HG ;

Kim, ID .

INTEGRATED FERROELECTRICS, 2004, 66 :195-+

[10] Defect control for low leakage current in K0.5Na0.5NbO3 single crystals [J].

Kizaki, Yoichi ;

Noguchi, Yuji ;

Miyayama, Masaru .

APPLIED PHYSICS LETTERS, 2006, 89 (14)

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