Picosecond pulse generation with 1.5 μm passively modelocked surface-emitting semiconductor laser

被引：25

作者：

Hoogland, S ^{[1
]}

Garnache, A

Sagnes, I

Paldus, B

Weingarten, KJ

Grange, R

Haiml, M

Paschotta, R

Keller, U

Tropper, AC

机构：

[1] Univ Southampton, Dept Phys & Astron, Southampton SO17 1BJ, Hants, England

[2] Swiss Fed Inst Technol, Inst Quantum Elect, ETH Honggerberg, HPT, CH-8093 Zurich, Switzerland

[3] GigaTera Inc, CH-8953 Dietikon, Switzerland

[4] Picarro, Sunnyvale, CA 94086 USA

[5] CNRS, UPR20, Lab Photon & Nanostruct, F-91460 Marcoussis, France

[6] Univ Montpellier 2, F-34095 Montpellier 05, France

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 11期

关键词：

D O I：

10.1049/el:20030576

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report the first demonstration of an optically pumped passively modelocked surface-emitting semiconductor laser operating in the 1.5 mum region. The modelocked laser emits pulses of 6.5 ps full width at half maximum duration with an average power of 13.5 mW at a fundamental repetition rate of 1.342 GHz. The peak power was 1.6 W.

引用

页码：846 / 847

页数：2

共 9 条

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