Understanding the growth mode transition in InAs/GaAs(001) quantum dot formation

被引：30

作者：

Krzyzewski, TJ

Joyce, PB

Bell, GR

Jones, TS ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Chem, Ctr Elect Mat & Devices, London SW7 2AZ, England

[2] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

SURFACE SCIENCE | 2003年 / 532卷

关键词：

molecular beam epitaxy; scanning tunneling microscopy; gallium arsenide; indium arsenide; surface structure; morphology; roughness; and topography;

D O I：

10.1016/S0039-6028(03)00455-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Scanning tunneling microscopy has been used to monitor the growth by molecular beam epitaxy of InAs quantum dots (QDs) on GaAs(001) at and near the critical coverage (theta(crit)). Direct evidence is obtained for the existence of small irregular 3D islands of height 6-12 Angstrom (2-4 ML) which contain similar to150 atoms or more. These features develop rapidly (within 0.05 ML of theta(crit)) into regular mature QDs with an average volume >1 X 10(4) atoms. Scaling analysis of the QD size distribution's suggests that strain may have a significant influence during QD nucleation and the initial stages of growth, but is unimportant during the later stages of QD development. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：822 / 827

页数：6

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