Improving the photoluminescence quantum yields of quantum dot films through a donor/acceptor system for near-IR LEDs

被引:21
作者
Davis, Nathaniel. J. L. K. [1 ]
Allardice, Jesse R. [2 ]
Xiao, James [2 ]
Karani, Arfa [2 ]
Jellicoe, Tom C. [2 ]
Rao, Akshay [2 ]
Greenham, Neil C. [2 ]
机构
[1] Victoria Univ Wellington, Sch Chem & Phys Sci, Wellington 6140, New Zealand
[2] Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England
基金
英国工程与自然科学研究理事会;
关键词
LIGHT-EMITTING-DIODES; ENERGY-TRANSFER; NANOCRYSTALS; ELECTROLUMINESCENCE; DEVICES; EMISSION; SELENIDE;
D O I
10.1039/c8mh01122b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Near-infrared light-emitting diodes (LEDs) show potential for telecommunication and medical applications. Quantum dot nanocrystals (QDs), specifically lead chalcogenides, are candidate LED materials since they exhibit tuneable luminescence across the whole near-infrared region, but their surface structure must be carefully controlled to achieve efficient emission. We demonstrate an efficient donor-acceptor QD system by embedding low-energy QDs with high photoluminescence quantum efficiency (PLQE) into a matrix of higher-energy QDs with lower PLQE. We find that the overall PLQE of densely packed cross-linked QD films can be improved by the incorporation of a relatively small fraction of well-passivated acceptor QDs, also leading to improved LED performance. Excitations are transferred into the isolated low-energy acceptor QDs, where they recombine with high radiative efficiency.
引用
收藏
页码:137 / 143
页数:7
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