The characteristics of MBE-grown InxAl1-xN/GaN surface states

被引：9

作者：

Jiao, Wenyuan ^{[1
]}

Kong, Wei ^{[1
]}

Li, Jincheng ^{[1
]}

Collar, Kristen ^{[2
]}

Kim, Tong-Ho ^{[1
]}

Losurdo, Maria ^{[3
]}

Brown, April S. ^{[1
]}

机构：

[1] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA

[2] Duke Univ, Dept Phys, Durham, NC 27708 USA

[3] CNR, NANOTEC, Ist Nanotecnol, Via Orabona 4, I-70126 Bari, Italy

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 08期

关键词：

2-DIMENSIONAL ELECTRON-GAS; FIELD-EFFECT TRANSISTORS; HETEROSTRUCTURES; MOBILITY; EPITAXY; CHARGE;

D O I：

10.1063/1.4961583

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The density and energy distribution of InxAl1-xN/GaN surface donor states are studied for InxAl1-xN structures with varying indium compositions. The results support a surface states model with a constant energy distribution of 2.17-2.63 eV below the conduction band minimum and a concentration of 4.64-8.27 x 10(13) cm(-2) eV(-1). It is shown that the properties of the surface states are affected by the surface indium composition x(s), as opposed to the bulk composition, x(b) (InxAl1-xN). Higher surface indium composition x(s) increases the density of surface states and narrows their energy distribution. Published by AIP Publishing.

引用

页数：4

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