Influence of annealing temperature on the structural, optical and mechanical properties of ALD-derived ZnO thin films

被引：57

作者：

Yen, C. -Y. ^{[1
]}

Jian, S. -R. ^{[1
]}

Chen, G. -J. ^{[1
]}

Lin, C. -M. ^{[2
]}

Lee, H. -Y. ^{[3
]}

Ke, W. -C. ^{[4
]}

Liao, Y. -Y. ^{[5
]}

Yang, P. -F. ^{[6
]}

Wang, C. -T. ^{[6
]}

Lai, Y. -S. ^{[6
]}

Jang, Jason S. -C. ^{[7
]}

Juang, J. -Y. ^{[8
]}

机构：

[1] I Shou Univ, Dept Mat Sci & Engn, Kaohsiung 840, Taiwan

[2] Natl Hsinchu Univ Educ, Dept Appl Sci, Hsinchu 300, Taiwan

[3] Natl Synchrotron Radiat Res Ctr, Hsinchu 300, Taiwan

[4] Yuan Ze Univ, Dept Mech Engn, Tao Tuan 32003, Taiwan

[5] Natl Univ Kaohsiung, Dept Appl Phys, Kaohsiung 81148, Taiwan

[6] Adv Semicond Engn Inc, Cent Prod Solut, Kaohsiung 811, Taiwan

[7] Natl Cent Univ, Dept Mech Engn, Inst Mat Sci & Engn, Chungli 320, Taiwan

[8] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

来源：

APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 17期

关键词：

ZnO thin films; Atomic layer deposition; XRD; AFM; Nanoindentation; Hardness; CATALYST-FREE SYNTHESIS; NANOINDENTATION; DEFORMATION; NANOWIRES; SAPPHIRE; EPITAXY;

D O I：

10.1016/j.apsusc.2011.04.088

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZnO thin films grown on Si(1 1 1) substrates by using atomic layer deposition (ALD) were annealed at the temperatures ranging from 300 to 500 degrees C. The X-ray diffraction (XRD) results show that the annealed ZnO thin films are highly (0 0 2)-oriented, indicating a well ordered microstructure. The film surface examined by the atomic force microscopy (AFM), however, indicated that the roughness increases with increasing annealing temperature. The photoluminescence (PL) spectrum showed that the intensity of UV emission was strongest for films annealed at 500 degrees C. The mechanical properties of the resultant ZnO thin films investigated by nanoindentation reveal that the hardness decreases from 9.2 GPa to 7.2 GPa for films annealed at 300 degrees C and 500 degrees C, respectively. On the other hand, the Young's modulus for the former is 168.6 GPa as compared to a value of 139.5 GPa for the latter. Moreover, the relationship between the hardness and film grain size appear to follow closely with the Hall-Petch equation. (C) 2011 Elsevier B. V. All rights reserved.

引用

页码：7900 / 7905

页数：6

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