HgCdTe heterostructures grown by MBE on Si(310) substrates: structural and electrophysical properties

被引:1
作者
Yakushev, M. V. [1 ]
Babenko, A. A. [1 ]
Varavin, V. S. [1 ]
Vasil'ev, V. V. [1 ]
Mironova, L. V. [1 ]
Pridachin, D. N. [1 ]
Remesnik, V. G. [1 ]
Sabinina, I. V. [1 ]
Sidorov, Yu. G. [1 ]
Suslyakov, A. O. [1 ]
机构
[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
来源
19TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES | 2007年 / 6636卷
关键词
molecular beam epitaxy; silicon substrate; MCT; electrophysical characteristics;
D O I
10.1117/12.742600
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Molecular beam epitaxy has been used for the growth of Hg1-xCdxTe layers (x = 0.30 - 0.34) on Si(310) substrates. The grown structures were characterized by Hall measurements for carrier density and mobility. The densities of stacking faults, threading dislocations, antiphase boundaries and macroscopic V-defects were determined by selective chemical etching. The 128 x 128 photodiode array with wavelength cut-off lambda(1/2)(77K) = 4.07 mu m was fabricated with good photoelectric parameters.
引用
收藏
页数:7
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