HgCdTe heterostructures grown by MBE on Si(310) substrates: structural and electrophysical properties

被引：1

作者：

Yakushev, M. V. ^{[1
]}

Babenko, A. A. ^{[1
]}

Varavin, V. S. ^{[1
]}

Vasil'ev, V. V. ^{[1
]}

Mironova, L. V. ^{[1
]}

Pridachin, D. N. ^{[1
]}

Remesnik, V. G. ^{[1
]}

Sabinina, I. V. ^{[1
]}

Sidorov, Yu. G. ^{[1
]}

Suslyakov, A. O. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

19TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES | 2007年 / 6636卷

关键词：

molecular beam epitaxy; silicon substrate; MCT; electrophysical characteristics;

D O I：

10.1117/12.742600

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Molecular beam epitaxy has been used for the growth of Hg1-xCdxTe layers (x = 0.30 - 0.34) on Si(310) substrates. The grown structures were characterized by Hall measurements for carrier density and mobility. The densities of stacking faults, threading dislocations, antiphase boundaries and macroscopic V-defects were determined by selective chemical etching. The 128 x 128 photodiode array with wavelength cut-off lambda(1/2)(77K) = 4.07 mu m was fabricated with good photoelectric parameters.

引用

页数：7

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