Compact Electrical/Optical Model for InGaN/GaN Quantum-Well Based LEDs

被引：0
作者：
Ajaykumar, Arjun [1 ]
Zhou, Xing [1 ]
Syamal, Binit [1 ]
Ben Chiah, Siau [1 ]
Zhang, Li [2 ,3 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, 50 Nanyang Ave, Singapore 639798, Singapore
[2] Natl Univ Singapore, Singapore, Singapore
[3] Singapore MIT Alliance Res & Technol, Singapore, Singapore
来源：
PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2015年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a physics-based compact model for LEDs to study their electrical and optical output characteristics. In this approach we solve Poisson equation along with Gauss law, including the effect of polarization charges, to calculate the electric field and thus the potential profile in the active region (intrinsic region with quantum well) of the LED. The ambipolar nature of current transport helps in calculating the steady-state electron and hole concentrations by solving the rate equations along with the electrostatic solutions from the Poisson equation. The quantum-confined Stark effect in the quantum well and generation-recombination currents in the doped P and N regions of the LED are not currently included in the model. The model is useful for predicting the optical and electrical characteristics of the InGaN/GaN quantum-well-based LEDs.
引用
收藏
页码：766 / 769
页数：4
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