Resistive memory switching in epitaxially grown NiO

被引：52

作者：

Lee, S. R.

Char, K. ^{[1
]}

Kim, D. C.

Jung, R.

Seo, S.

Li, X. S.

Park, G. -S.

Yoo, I. K.

机构：

[1] Seoul Natl Univ, Ctr Strongly Correlated Mat Res, Dept Phys & Astron, Seoul 151742, South Korea

[2] Samsung Adv Inst Technol, Suwon 440600, South Korea

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 20期

关键词：

D O I：

10.1063/1.2815658

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial NiO films have been fabricated on SrRuO3 films prepared on SrTiO3 single-crystal substrates. The x-ray diffraction spectra and transmission electron microscopy confirm the epitaxial growth of NiO with atomically flat surfaces on the SRO electrode. The I-V measurements of epitaxial NiO show the resistive memory switching behavior with a change in the polarity of the voltage bias, in contrast with the switching behavior of polycrystalline NiO by a single polarity. The I-V characteristics of epitaxial NiO prepared under various synthesis conditions and electrodes are presented, which suggests an important role of interfaces between NiO and electrodes on the resistive switching behavior. (c) 2007 American Institute of Physics.

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页数：3

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