Non-trivial impurity and field effects in topological Kondo insulator SmB6

被引:0
作者
Roy, Sayak Guha [1 ]
Das, Anirban [2 ]
Mukherjee, Shantanu [2 ,3 ]
机构
[1] Indian Inst Technol Madras, Dept Phys, Chennai 600036, Tamil Nadu, India
[2] IIT Madras, Ctr Atomist Modelling & Mat Design, Chennai 600036, Tamil Nadu, India
[3] IIT Madras, Quantum Ctr Diamond & Emergent Mat QCenDiem Grp, Chennai 600036, Tamil Nadu, India
关键词
Kondo insulators; Topological insulators; Samarium Hexaboride; External magnetic fields; Electric fields; Impurities; EXPANSION; SURFACE; LATTICE; GAP;
D O I
10.1016/j.matpr.2022.01.193
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Topological Kondo Insulator SmB6 is a strongly correlated material where a spin-orbit interaction between the localized odd-parity f-electron and even parity d-electron levels lead to a band inversion and opening of an insulating gap. The non-trivial topology (Z(2) = -1) leads to the formation of a topologically protected conducting surface state due to the presence of strong correlation physics. Although the bulk material is known to form a topological Kondo gap, recent magnetic quantum oscillation experiments on SmB6 find an unconventional Fermi surface whose origin remains a matter of intense debate, and the possible role of topological surface state and impurity induced in-gap states have been proposed. By utilizing a realistic multi-orbital tight-binding Hamiltonian, this work aims to develop a microscopic model to study the effects of perturbations like external magnetic fields, and impurities on the low energy bulk and topological surface state properties of SmB6. We further examine the role of an external electric field in tuning the non-trivial topological surface state in SmB6 and provide experimentally observable signatures in the local density of state (LDOS) near non-magnetic and magnetic impurities. Additionally, we study the surface Ferromagnetism that arises in SmB6 as observed by magnetoresistance experiments. Copyright (C) 2022 Elsevier Ltd. All rights reserved.
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页码:166 / 173
页数:8
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